
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SJ649 is P-channel MOS Field Effect Transistor designed
PART NUMBER
2SJ649
PACKAGE
Isolated TO-220
for solenoid, motor and lamp driver.
FEATURES
? Low on-state resistance:
R DS(on)1 = 48 m ? MAX. (V GS = –10 V, I D = –10 A)
R DS(on)2 = 75 m ? MAX. (V GS = –4.0 V, I D = –10 A)
? Low input capacitance:
C iss = 1900 pF TYP. (V DS = –10 V, V GS = 0 V)
? Built-in gate protection diode
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V DSS
V GSS
I D(DC)
–60
m 20
m 20
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
m 70
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation (T A = 25°C)
Channel Temperature
Storage Temperature
P T
P T
T ch
T stg
25
2.0
150
–55 to +150
W
W
°C
°C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
–20
40
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = –30 V, R G = 25 ? , V GS = –20 ? 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16332EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP(K)
Printed in Japan
2002